Web22 lug 2015 · This is the highest value among all reported results for Zr and Hf oxide systems, and equivalent oxide thickness (EOT) value of under 0.5 nm could be obtained with a leakage current of under 10(-7) A·cm(-2), which is the lowest EOT value ever reported for a DRAM storage capacitor system without using a noble-metal-based electrode. Web1 mar 2009 · Conclusion. Zirconium oxide thin films were deposited using Zr-AMD and TEMA-Zr as the zirconium precursor and water as the oxygen reactant in a substrate temperature range of 150–350 °C. The growth rate of ZrO 2 films from TEMA-Zr was constant with the substrate temperature, but increased rapidly above 300 °C, while that …
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